Tailoring the Structural, Optical and Electrical Properties of Zinc Oxide Nanostructures by Zirconium Doping

Owing to its low resistivity, high transmittance, and tunable optical band gap, ZnO is of great interest for optoelectronic applications. Herein, the sol–gel technique was used synthesize un-doped zirconium-doped zinc oxide (ZZO) nanostructures with different concentrations Zirconium (Zr). X-ray diffraction (XRD), scanning electron microscope (SEM), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), UV-Vis photoluminescence (PL) measurements were investigate influence Zr doping on structural, optical, electrical properties developed nanostructures. XRD SEM confirmed increase in crystallite size increasing Zr. analysis indicated presence oxygen vacancies synthesized illustrated blue shift gap red absorption edge ZZO For measurement properties, spin-coating deposit Zr-doped layers ~165 nm thickness. The four-probe-point (4PP) method that caused a reduction resistance. Hall Effect showed value, 3.78 × 1020 cm−3, carrier concentration 10.2 cm2/Vs, mobility layer. transmittance ~80%, wide 3.51 eV, resistivity 1.35 10−3 Ω·cm, maximum cm−3 make one most promising candidates application transparent conductive (TCO) devices.